2SJ386 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ386
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
Outline
TO-92 Mod
D
321
1. Source
G
2. Drain
3. Gate
S