2SJ248 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ248
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
Outline
TO-220FM
D
12 ₃
1. Gate
G
2. Drain
3. Source
S