2SJ246S Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – SILICON P-CHANNEL MOS FET

2SJ246 L , 2SJ246 S
SILICON P-CHANNEL MOS FET
Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4V gate drive device can be driven from
5V source.
• Suitable for Switching regulator, DC – DC
converter
DPAK–1
4
12 ₃
2, 4
1
3
4
123
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V_DSS
–30
V
———————————————————————————————————————————
Gate to source voltage
V_GSS
±20
V
———————————————————————————————————————————
Drain current
I_D
–7
A
———————————————————————————————————————————
Drain peak current
I_D(pulse)*
–28
A
———————————————————————————————————————————
Body–drain diode reverse drain current
I_DR
–7
A
———————————————————————————————————————————
Channel dissipation
Pch**
20
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C