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2SJ245L Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – SILICON P-CHANNEL MOS FET | |||
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2SJ245 L , 2SJ245 S
SILICON P-CHANNEL MOS FET
Application
High speed power switching
Features
⢠Low onâresistance
⢠High speed switching
⢠Low drive current
⢠4 V Gate drive device can be driven
from 5 V source
⢠Suitable for Switching regulator, DC â DC
converter
DPAKâ1
4
12 3
2, 4
1
3
4
12 3
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
âââââââââââââââââââââââââââââââââââââââââââ
Drain to source voltage
VDSS
â60
V
âââââââââââââââââââââââââââââââââââââââââââ
Gate to source voltage
VGSS
±20
V
âââââââââââââââââââââââââââââââââââââââââââ
Drain current
ID
â5
A
âââââââââââââââââââââââââââââââââââââââââââ
Drain peak current
ID(pulse)*
â20
A
âââââââââââââââââââââââââââââââââââââââââââ
Bodyâdrain diode reverse drain current
IDR
â5
A
âââââââââââââââââââââââââââââââââââââââââââ
Channel dissipation
Pch**
20
W
âââââââââââââââââââââââââââââââââââââââââââ
Channel temperature
Tch
150
°C
âââââââââââââââââââââââââââââââââââââââââââ
Storage temperature
Tstg
â55 to +150
°C
âââââââââââââââââââââââââââââââââââââââââââ
* PW ⤠10 µs, duty cycle ⤠1 %
** Value at Tc=25°C
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