2SJ221 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ221
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
 Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
D
123
1. Gate
G
2. Drain
(Flange)
3. Source
S