2SJ218 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ218
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• 4 V gate drive device
 Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline