2SJ117 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ117
Silicon P-Channel MOS FET
ADE-208-1180 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
• High speed switching
• Good frequency characteristics
• Wide area of safe operation
• Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.
Outline
TO-220AB
D
123
1. Gate
G
2. Drain
(Flange)
3. Source
S