2SH18 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N-Channel IGBT

ADE–208–291 (Z)
2SH18
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
Application
High speed power switching
TO–220AB
Features
• High speed switching
• Low on saturation voltage
2
1
3
1
2
3
1. Gate
2. Collector
3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to emitter voltage
V_CES
600
V
———————————————————————————————————————————
Gate to emitter voltage
V_GES
±20
V
———————————————————————————————————————————
Collector current
I_C
18
A
———————————————————————————————————————————
Collector peak current
ic(peak)
30
A
———————————————————————————————————————————
Collector dissipation
P_C*
60
W
———————————————————————————————————————————
Channel temperature
T_j
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* Value at Tc = 25°C
1