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2SH17 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N-Channel IGBT | |||
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ADEâ208â290 (Z)
2SH17
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
Application
High speed power switching
TOâ220AB
Features
⢠High speed switching
⢠Low on saturation voltage
2
1
3
1
2
3
1. Gate
2. Collector
3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
âââââââââââââââââââââââââââââââââââââââââââ
Collector to emitter voltage
VCES
600
V
âââââââââââââââââââââââââââââââââââââââââââ
Gate to emitter voltage
VGES
±20
V
âââââââââââââââââââââââââââââââââââââââââââ
Collector current
IC
12
A
âââââââââââââââââââââââââââââââââââââââââââ
Collector peak current
ic(peak)
20
A
âââââââââââââââââââââââââââââââââââââââââââ
Collectorl dissipation
PC*
50
W
âââââââââââââââââââââââââââââââââââââââââââ
Channel temperature
Tj
150
°C
âââââââââââââââââââââââââââââââââââââââââââ
Storage temperature
Tstg
â55 to +150
°C
âââââââââââââââââââââââââââââââââââââââââââ
* Value at Tc = 25°C
1
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