2SD2107 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SD2107
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
123
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at T_C = 25°C.
Symbol
V_CBO
V_CEO
V_EBO
I_C
I _C(peak)
P_C
P_C * ¹
Tj
Tstg
1. Base
2. Collector
3. Emitter
Rating
Unit
70
V
60
V
5
V
4
A
8
A
2
W
25
150
°C
–55 to +150
°C