2SD1527 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SD1527
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at T_C = 25°C.
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
P_C * ¹
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Rating
Unit
1000
V
1000
V
5
V
0.5
A
1.8
W
25
W
150
°C
–55 to +150
°C