2SC5120 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – High frequency amplifier

2SC5120
Silicon NPN Epitaxial
Application
High frequency amplifier
TO–126FM
Features
• Excellent high frequency characteristics
f_T = 500 MHz typ
• High voltage and low output capacitance
V_CEO = 150 V, Cob = 5.0 pF typ
• Suitable for wide band video amplifier
1 ₂₃
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to base voltage
V_CBO
150
V
———————————————————————————————————————————
Collector to emitter voltage
V_CEO
150
V
———————————————————————————————————————————
Emitter to base voltage
V_EBO
3
V
———————————————————————————————————————————
Collector current
I_C
0.2
A
———————————————————————————————————————————
Collector peak current
ic(peak)
0.4
A
———————————————————————————————————————————
Collector power dissipation
P_C
1.4
W
—————
8*¹
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Tc = 25°C