2SC5025 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – High frequency amplifier

2SC5025
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics
f_T = 1.2 GHz typ
• Low output capacitance
Cob = 5.0 pF typ
TO–126FM
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
V_CBO
30
V
———————————————————————————————————————————
Collector to emitter voltage
V_CEO
20
V
———————————————————————————————————————————
Emitter to base voltage
V_EBO
3.5
V
———————————————————————————————————————————
Collector current
I_C
0.3
A
———————————————————————————————————————————
Collector peak current
ic(peak)
0.5
A
———————————————————————————————————————————
Collector power dissipation
P_C
1
W
———————————————————————————————————————————
Collector power dissipation
P_C^*1
5
W
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at T_C = 25°C.