2SC5023 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – High frequency amplifier

2SC5023
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics
f_T = 1000 MHz typ
• High breakdown voltage and low output
capacitance
V_CEO = 100 V, Cob = 4.5 pF typ
• Suitable for wide band video amplifier
TO–126FM
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
V_CBO
100
V
———————————————————————————————————————————
Collector to emitter voltage
V_CEO
100
V
———————————————————————————————————————————
Emitter to base voltage
V_EBO
5
V
———————————————————————————————————————————
Collector current
I_C
0.2
A
———————————————————————————————————————————
Collector peak current
ic(peak)
0.5
A
———————————————————————————————————————————
Collector power dissipation
P_C
1.25
W
———————————————————————————————————————————
Collector power dissipation
P_C^*1
8
W
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at T_C = 25°C.