2SC4992 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon NPN Bipolar Transistor

2SC4992
Silicon NPN Bipolar Transistor
Application
VHF & UHF wide band amplifire
Features
• High gain bandwidth product
f_T = 9.5 GHz typ
• High gain, low noise figure
PG = 15.0 dB typ,
NF = 1.2 dB typ at f = 900 MHz
CMPAK–4
4
3
1
2
1. Collector
2. Emitter
3. Base
4. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to base voltage
V_CBO
15
V
———————————————————————————————————————————
Collector to emitter voltage
V_CEO
9
V
———————————————————————————————————————————
Emitter to base voltage
V_EBO
1.5
V
———————————————————————————————————————————
Collector current
I_C
50
mA
———————————————————————————————————————————
Collector power dissipation
P_C
100
mW
———————————————————————————————————————————
Junction temperature
T_j
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————