2SC4797 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SC4797
Silicon NPN Triple Diffused
Application
TV / character display horizontal deflection output
Features
• High speed switching
t_f ≤ 0.6 µs
• High breakdown voltage
V_CBO = 1700 V
• Isolated package
TO–3PFM
TO–3PFM
1
2
3
1. Base
2. Collector
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
V_CBO
1700
V
———————————————————————————————————————————
Collector to emitter voltage
V_CEO
900
V
———————————————————————————————————————————
Emitter to base voltage
V_EBO
6
V
———————————————————————————————————————————
Collector current
I_C
8
A
———————————————————————————————————————————
Collector surge current
ic(surge)
20
A
———————————————————————————————————————————
Collector power dissipation
P_C^*1
50
W
———————————————————————————————————————————
Junction temperature
T_j
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at T_C = 25°C.