2SC4745 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Charcater Display Horizontal Deflection Output

2SC4745
Silicon NPN Triple Diffused
Character Display Horizontal Deflection Output
Feature
• High speed switching
t_f = 0.2 µs typ
• High breakdown voltage
V_CBO = 1500 V
• Isolated package; TO-3PFM
TO-3PFM
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rating Unit
————————————————————–
Collector to base voltage V_CBO 1500 V
————————————————————–
Collector to emitter voltage V_CEO 800 V
————————————————————–
Emitter to base voltage
V_EBO 6
V
————————————————————–
Collector current
I_C
6
A
————————————————————–
Collector peak current
i_C(peak) 7
A
————————————————————–
Collector surge current
i_C(surge) 16
A
————————————————————–
Collector power dissipation P_C*1 50 W
————————————————————–
Junction temperature
Tj
150 °C
————————————————————–
Storage temperature
Tstg –55 to °C
+150
————————————————————–
Note: 1. Value at T_C = 25°C.
123
1. Base
2. Collector
3. Emitter
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test condition
———————————————————————————————————————————
Collector to emitter breakdown voltage V_(BR)CEO 800 — — V
I_C = 10 mA, R_BE = ∞
———————————————————————————————————————————
Emitter to base breakdown voltage
V_(BR)EBO 6
——V
I_E = 10 mA, I_C = 0
———————————————————————————————————————————
Collector cutoff current
I_CES
— — 500 µA V_CE = 1500 V, R_BE = 0
———————————————————————————————————————————
DC current transfer ratio
h_FE
7
— 30
V_CE = 5 V, I_C = 1 A
———————————————————————————————————————————
Collector to emitter saturation voltage
V_CE(sat) —
—
5
V
I_C = 5 A, I_B = 1 A
———————————————————————————————————————————
Base to emitter saturation voltage
V_BE(sat) — — 1.5 V
I_C = 5 A, I_B = 1 A
———————————————————————————————————————————