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2SC4529 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial VHF Wide Brand Amplifier
2SC4529
Silicon NPN Epitaxial
VHF Wide Band Amplifier
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rating Unit
————————————————————–
Collector to base voltage VCBO 30 V
————————————————————–
Collector to emitter voltage VCEO 20 V
————————————————————–
Emitter to base voltage
VEBO 3
V
————————————————————–
Collector current
IC
300 mA
————————————————————–
Collector peak current
iC(peak) 500 mA
————————————————————–
Collector power dissipation PC
1
W
——–———–
PC*1
5
————————————————————–
Junction temperature
Tj
150 °C
————————————————————–
Storage temperature
Tstg –55 to °C
+150
————————————————————–
Note: 1. Value at TC = 25°C.
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test condition
———————————————————————————————————————————
Collector to base breakdown voltage
V(BR)CBO 30
—
—
V
IC = 100 µA, IE = 0
———————————————————————————————————————————
Collector to emitter breakdown voltage V(BR)CEO 20 — — V
IC = 1 mA, RBE = ∞
———————————————————————————————————————————
Collector cutoff current
ICBO
— — 1.0 µA VCB = 25 V, IE = 0
———————————————————————————————————————————
Emitter cutoff Current
IEBO
— — 10 µA VEB = 3 V, IC = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
50 — 200
VCE = 5 V, IC = 50 mA
———————————————————————————————————————————
Collector to emitter saturation voltage
VCE(sat) — — 1.0 V
IC = 100 mA, IB = 10 mA
———————————————————————————————————————————
Gain bandwidth product
fT
1.5 2.2 — GHz VCE = 5 V, IC = 50 mA
———————————————————————————————————————————
Collector output capacitance
Cob
— 4.7 — pF VCB = 10 V, IE = 0, f = 1 MHz
———————————————————————————————————————————
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