2SC1881 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SC1881(K)
Silicon NPN Triple Diffused
Application
High gain amplifier power switching
Outline
TO-220AB
2
1
23
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at T_C = 25°C.
Symbol
V_CBO
V_CEO
V_EBO
I_C
I _C(peak)
P_C * ¹
Tj
Tstg
1
6.8 kΩ
(Typ)
400 Ω
(Typ)
3
Ratings
Unit
60
V
60
V
7
V
3
A
6
A
30
W
150
°C
–55 to +150
°C