1SV121 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

ADE-208-399(Z)
1SV121
Silicon Epitaxial Planar PIN Diode
for High Frequency Attenuator
Features
• Low capacitance.(C=0.7pF max)
• Small glass package (MHD) enables easy
mounting and high reliability.
Outline
Rev. 0
Oct. 1995
1
Ordering Information
Type No. Cathode band Mark
1SV121 Verdure
1
Package Code
MHD
2
Cathode band
1. Cathode
2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V_R
I_F
P_d
T_j
Tstg
Value
Unit
100
V
100
mA
250
mW
175
°C
-65 to +175
°C
Electrical Characteristics (Ta = 25°C)
Item
Forward voltage
Reverse current
Capacitance
Forward resistance
Symbol Min Typ
V_F
—
—
I_R
—
—
C
—
—
r _f1
1.0
—
r _f2
—
—
Max
Unit Test Condition
1.1
V
I_F= 50 mA
100
nA
V_R= 30 V
0.7
pF
V_R = 50 V, f = 1 MHz
—
KΩ I_F = 10 µA, f = 100 MHz
10
Ω
I_F = 10 mA, f = 100 MHz