1SS84 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for High Speed Switching

ADE-208-151A(Z)
1SS84
Silicon Epitaxial Planar Diode
for High Speed Switching
Features
• Low reverse current.
• High reliability with glass seal.
Outline
Rev. 1
Aug. 1995
1
Ordering Information
Type No. Cathode 2nd band 3rd band Package
Code
1SS84 Light Blue Dark Green Dark Green DO-35
2
3rd band
2nd band
Cathode band
1. Cathode
2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
V_RM
V_R
I_FM
I_FSM *
I_o
P_d
T_j
Tstg
75
V
70
V
450
mA
1
A
150
mA
250
mW
175
°C
-65 to +175
°C
* Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Forward voltage
Reverse current
Capacitance
V_F
—
—
I_R1
—
0.3
I_R2
—
—
I_R3
—
—
C
—
—
Reverse recovery time t_rr
—
—
Max
Unit Test Condition
0.8
V
I_F = 10 mA
3
V_R = 0.3 V
10
nA
V_R = 20 V
100
V_R = 55 V
5
pF
V_R = 1 V, f = 1 MHz
50
ns
I_F=I_R=10mA, Irr=1mA,R_L=100Ω