HM628512 Datasheet, PDF (7/15 Pages) Hitachi Metals, Ltd – 524288-word x 8-bit High Speed CMOS Static RAM

HM628512 Series
AC Characteristics (Ta = 0 to +70°C, V_CC = 5 V ± 10%, unless otherwise noted.)
Test Conditions
• Input pulse levels: 0.8 V to 2.4 V
• Input rise and fall time: 5 ns
• Input and output timing reference levels: 1.5 V
• Output load: 1 TTL Gate + C_L (100 pF) (HM628512-7A/7)
1 TTL Gate + C_L (50 pF) (HM628512-5)
(Including scope & jig)
Read Cycle
HM628512
-5
-7A
-7
Parameter
Symbol Min Max Min Max Min Max Unit Notes
Read cycle time
t _RC
55 — 65 — 70 — ns
Address access time
t _AA
— 55 — 60 — 70 ns
Chip select access time
t _CO
— 55 — 65 — 70 ns
Output enable to output valid
t _OE
— 25 — 30 — 35 ns
Chip selection to output in low-Z
t _LZ
10 — 10 — 10 — ns 2
Output enable to output in low-Z
t _OLZ
5
—5
—5
— ns 2
Chip deselection to output in high-Z t_HZ
0
20 0
20 0
25 ns 1, 2
Output disable to output in high-Z t_OHZ
0
20 0
20 0
25 ns 1, 2
Output hold from address change t_OH
10 — 10 — 10 — ns
Notes: 1. t_HZ and t_OHZ are defined as the time at which the outputs achieve the open circuit conditions and are
not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
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