HZU6.2L Datasheet, PDF (2/6 Pages) Hitachi Metals, Ltd – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZU6.2L
Absolute Maximum Ratings (Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Note 1. See Fig.2.
Symbol
Pd ^*1
Tj
Tstg
Value
Unit
150
mW
150
°C
-55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Zener voltage
V_Z
Reverse current
I_R
Dynamic resistance r _d
5.80 


6.60 V
100 nA
30 Ω
I_Z = 5 mA, 40ms pulse
V_R = 5.0V
I_Z = 5 mA
2