2SJ389 Datasheet, PDF (1/7 Pages) Hitachi Metals, Ltd – Silicon P Channel MOS FET

2SJ389 L , 2SJ389 S
Silicon P Channel MOS FET
Application
High speed power switching
DPAK–2
Features
• Low on–resistance
• High speed switching
2, 4
• Low drive current
• 4 V gate drive device can be driven from
1
5 V source
• Suitable for Switching regulator, DC – DC
converter
• Avalanche Ratings
3
4
4
123
12 ₃
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V_DSS
–60
V
———————————————————————————————————————————
Gate to source voltage
V_GSS
±20
V
———————————————————————————————————————————
Drain current
I_D
–10
A
———————————————————————————————————————————
Drain peak current
I_D(pulse)*
–40
A
———————————————————————————————————————————
Body–drain diode reverse drain current
I_DR
–10
A
———————————————————————————————————————————
Avalanche current
I_AP***
–10
A
———————————————————————————————————————————
Avalanche energy
E_AR***
8.5
mJ
———————————————————————————————————————————
Channel dissipation
Pch**
30
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ≥ 50 Ω