SXXHNS320 Datasheet, PDF (1/5 Pages) Hind Rectifiers Limited. – Rectifier Diode

Rectifier Diode SXXHNS/HRS320
Symbol
Characteristics
Conditions
T_J(⁰C) Value
Unit
BLOCKING PARAMETERS
V_RRM
I_RRM
Repetitive peak reverse voltage
Repetitive peak reverse current
CONDUCTING PARAMETERS
V = V_RRM
180 200-1500 V
180
30
mA
I_F(AV)
I_RMS
I_FSM
I²t
Average on-state current
RMS on-state current
Non repetitive peak surge on-
state current
Permissible surge energy
180 sine, 50H _Z,
T_C = 125⁰C
Sine wave, 10mS
without reverse
voltage
180
320
A
500
A
6550
A
214.50 kA²S
V_FM Peak on-state voltage drop
On-state
current = 1000A
180
1.40
V
V₀
Typical forward conduction
Threshold voltage
r₀
Typical forward slope resistance
180
0.77
V
180
0.57
mΩ
THERMAL & MECHANICAL PARAMETERS
R _{TH (J-C)}
R_{TH (C-HK)}
T_J
T_STG
F
W
Thermal impedance, 180⁰
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to heatsink
0.14
0.05
180
0_C/W
0_C/W
0_C
-40 – 180
26
270
0_C
NM
gms
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