SXXHN550 Datasheet, PDF (1/5 Pages) Hind Rectifiers Limited. – Rectifier Diode

Rectifier Diode SXXHN/HR550
Symbol
Characteristics
Conditions
T_J(⁰C) Value
Unit
BLOCKING PARAMETERS
V_RRM
I_RRM
Repetitive peak reverse voltage
Repetitive peak reverse current
CONDUCTING PARAMETERS
V = V_RRM
160 200-1800 V
160
40
mA
I_F(AV) Average on-state current
180 sine, 50H _Z,
T_C = 100⁰C
I_RMS RMS on-state current
I_FSM
Non repetitive peak surge on-
state current
Sine wave, 10mS
without reverse
160
I²t
Permissible surge energy
voltage
550
865
12500
781
A
A
A
kA²S
V_FM Peak on-state voltage drop
On-state
current = 1500A
160
1.65
V
V₀
Typical forward conduction
Threshold voltage
r₀
Typical forward slope resistance
160
0.85
V
160
0.50
mΩ
THERMAL & MECHANICAL PARAMETERS
R _{TH (J-C)}
R_{TH (C-HK)}
T_J
T_STG
F
W
Thermal impedance, 180⁰
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to heatsink
0.072
0.02
160
0_C/W
0_C/W
0_C
-40 – 160
20
875
0_C
NM
gms
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