SXXHBN200 Datasheet, PDF (1/5 Pages) Hind Rectifiers Limited. – Rectifier Diode

Rectifier Diode SXXHBN/HBR200
Symbol
Characteristics
Conditions
T_J(⁰C) Value
Unit
BLOCKING PARAMETERS
V_RRM
I_RRM
Repetitive peak reverse voltage
Repetitive peak reverse current
CONDUCTING PARAMETERS
V = V_RRM
180 200-1500 V
180
30
mA
I_F(AV) Average on-state current
180 sine, 50H _Z,
T_C = 130⁰C
I_RMS RMS on-state current
I_FSM
Non repetitive peak surge on-
state current
Sine wave, 10mS
without reverse
180
I²t
Permissible surge energy
voltage
200
300
4000
80.00
A
A
A
kA²S
V_FM Peak on-state voltage drop
On-state
current = 630A
V₀
Typical forward conduction
Threshold voltage
r₀
Typical forward slope resistance
THERMAL & MECHANICAL PARAMETERS
180
1.30
V
180
0.70
V
180
0.60
mΩ
R _{TH (J-C)}
R_{TH (C-HK)}
T_J
T_STG
F
W
Thermal impedance, 180⁰
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to heatsink
0.24
0.05
180
0_C/W
0_C/W
0_C
-40 – 180
18
160
0_C
NM
gms
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