SHXXC1130 Datasheet, PDF (1/5 Pages) Hind Rectifiers Limited. – Capsule Type Rectifier Diode

Capsule Type Rectifier Diode SHXXC1130
Symbol
Characteristics
Conditions
T_J(⁰C) Value
Unit
BLOCKING PARAMETERS
V_RRM
I_RRM
Repetitive peak reverse voltage
Repetitive peak reverse current
CONDUCTING PARAMETERS
V = V_RRM
160 200-1800 V
160
30
mA
I_F(AV)
I_RMS
I_FSM
I²t
Average on-state current
RMS on-state current
Non repetitive peak surge on-
state current
Permissible surge energy
180 sine, 50H _Z,
T_C = 65⁰C
Sine wave, 10mS
without reverse
voltage
160
1130
1775
11000
605
A
A
A
kA²S
V_FM Peak on-state voltage drop
On-state
current = 3000A
160
1.83
V
V₀
Typical forward conduction
Threshold voltage
r₀
Typical forward slope resistance
160
0.78
V
160
0.35
mΩ
THERMAL & MECHANICAL PARAMETERS
R _{TH (J-C)}
R_{TH (C-HK)}
T_J
T_STG
F
W
Thermal impedance, 180⁰
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to heatsink
0.045
0.015
160
0_C/W
0_C/W
0_C
-40 – 160
6.5
90
0_C
KN
gms
HIND RECTIFIERS LTD
1 of 5