H55TBXX Datasheet, PDF (1/6 Pages) Hind Rectifiers Limited. – PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR H55TBXX
Symbol
Characteristics
Conditions
T_J (⁰C)
Value
Unit
BLOCKING PARAMETERS
V_RRM
V_DRM
I_RRM
I_DRM
d_V/d_T
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
Rep. rate of change of voltage
CONDUCTING PARAMETERS
V = V_RRM
V = V_RRM
@ 67%V_DRM
I_F(AV)
I_RMS
I_TSM
I²t
V_T
V₀
R₀
di/dt
Average on-state current
RMS on-state current
Surge on-state current
I²t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
Repetitive rate of rise of current
180 sine, 50H _Z,
T_C = 75⁰C
Sine wave,
10mS without
reverse voltage
On-state
current = 175A
d_IG/d_T = 1A/µS
V_GK = 1V
TRIGGERING PARAMETERS
I_GT
V_GT
I_L
I_H
P_{G –PEAK}
di/dt
V_FGM
I_FGM
Gate trigger current
Gate trigger voltage
Latching Current
Holding Current
Maximum Peak Gate Power
Repetitive rate of rise of current
Maximum forward gate voltage
Maximum forward gate current
V_D = 5V
V_D = 5V
V_D = 5V
Pulse width
100μSec
THERMAL & MECHANICAL PARAMETERS
R _{TH (J-C)}
R_{TH (C-HK)}
T_J
T_STG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to heatsink
125
125
125
125
125
125
125
125
125
125
25
25
25
25
200-1600
200-1600
10
10
600
V
V
mA
mA
V/μS
55
85
900
4050
1.82
0.90
4.35
120
A
A
A
A²S
V
V
mΩ
A/μS
150
2.50
400
300
30
120
12
10
mA
V
mA
mA
W
A/μS
V
A
0.60
0.20
125
-40 - 125
4
45
0_C/W
0_C/W
0_C
0_C
NM
gms
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