H45TBXX Datasheet, PDF (1/6 Pages) Hind Rectifiers Limited. – PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR H45TBXX
Symbol
Characteristics
Conditions
BLOCKING PARAMETERS
V_RRM
V_DRM
I_RRM
I_DRM
d_V/d_T
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
Rep. rate of change of voltage
CONDUCTING PARAMETERS
V = V_RRM
V = V_RRM
@ 67%V_DRM
I_F(AV)
I_RMS
I_TSM
I²t
V_T
V₀
R₀
di/dt
Average on-state current
RMS on-state current
Surge on-state current
I²t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
Repetitive rate of rise of current
180 sine, 50H _Z, T_C
= 85⁰C
Sine wave, 10mS
without reverse
voltage
On-state
current = 150A
d_IG/d_T = 1A/µS
V_GK = 1V
TRIGGERING PARAMETERS
I_GT
V_GT
I_L
I_H
P_{G –PEAK}
di/dt
V_FGM
I_FGM
Gate trigger current
Gate trigger voltage
Latching Current
Holding Current
Maximum Peak Gate Power
Repetitive rate of rise of current
Maximum forward gate voltage
Maximum forward gate current
THERMAL & MECHANICAL PARAMETERS
V_D = 5V
V_D = 5V
V_D = 5V
Pulse width
100μSec
R _{TH (J-C)}
R_{TH (C-HK)}
T_J
T_STG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to heatsink
T_J
(⁰C)
125
125
125
125
125
125
125
125
125
125
25
25
25
25
HIND RECTIFIERS LTD
Value Unit
200-1600
200-1600
10
10
600
V
V
mA
mA
V/μS
45
70
800
3200
1.72
0.95
4.50
120
A
A
A
A²S
V
V
mΩ
A/μS
150
2.50
400
300
30
120
12
10
mA
V
mA
mA
W
A/μS
V
A
0.60
0.20
125
-40 - 125
4
45
0_C/W
0_C/W
0_C
0_C
NM
gms
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