H4350CHXX Datasheet, PDF (1/5 Pages) Hind Rectifiers Limited. – PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR H4350CHXX
Symbol
Characteristics
Conditions
T_J
(⁰C)
Value
Unit
BLOCKING PARAMETERS
V_RRM
V_DRM
I_RRM
I_DRM
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
CONDUCTING PARAMETERS
V = V_RRM
V = V_RRM
125 200-1200
V
125 200-1200
V
125
200
mA
125
200
mA
I_F(AV)
I_RMS
I_TSM
I²t
V_T
V₀
R₀
Average on-state current
RMS on-state current
Surge on-state current
I²t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
180 sine, 50H _Z,
T_C = 55⁰C
Sine wave,
10mS without 125
reverse voltage
On-state
current = 4kA
125
125
125
4350
6829
60
18000
1.18
0.88
0.075
A
A
kA
kA²S
V
V
mΩ
TRIGGERING PARAMETERS
I_GT
V_GT
I_H
I_L
di/dt
Gate trigger current
Gate trigger voltage
Holding Current
Latching Current
Repetitive rate of rise of current
V_D = 5V
V_D = 5V
V_D = 5V
25
350
mA
25
2.00
V
25
300
mA
25
700
mA
200
A/μSec
THERMAL & MECHANICAL PARAMETERS
R _{TH (J-C)}
R_{TH (C-HK)}
T_J
T_STG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to
heatsink
Case to
heatsink
.0095
0.002
125
-30 - 125
40-50
1150
0_C/W
0_C/W
0_C
0_C
KN
gms
HIND RECTIFIERS LTD
1 of 5