H3200CHXX Datasheet, PDF (1/6 Pages) Hind Rectifiers Limited. – PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR H3200CHXX
Symbol
Characteristics
Conditions
T_J
(⁰C)
Value
Unit
BLOCKING PARAMETERS
V_RRM
V_DRM
I_RRM
I_DRM
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
CONDUCTING PARAMETERS
V = V_RRM
V = V_RRM
125 200-2000
V
125 200-2000
V
125
200
mA
125
200
mA
I_F(AV)
I_RMS
I_TSM
I²t
V_T
V₀
R₀
Average on-state current
RMS on-state current
Surge on-state current
I²t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
180 sine, 50H _Z,
T_C = 68⁰C
Sine wave,
10mS without 125
reverse voltage
On-state
current = 3kA
125
125
125
3200
5000
50.40
12701
1.30
0.95
0.127
A
A
kA
kA²S
V
V
mΩ
TRIGGERING PARAMETERS
I_GT
Gate trigger current
V_D = 5V
25
V_GT
Gate trigger voltage
25
I_L
Latching Current
V_D = 5V
25
P_G–PEAK Maximum Peak Gate Power
Pulse width
100μSec
di/dt Repetitive rate of rise of current
V_FGM Maximum forward gate voltage
I_FGM Maximum forward gate current
400
3.50
700
150
200
30
10
mA
V
mA
W
A/μSec
V
A
THERMAL & MECHANICAL PARAMETERS
R _{TH (J-C)}
R_{TH (C-HK)}
T_J
T_STG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to
heatsink
0.009
0.002
125
-40 - 125
45
1700
0_C/W
0_C/W
0_C
0_C
KN
gms
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