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H150TBXX Datasheet, PDF (1/6 Pages) Hind Rectifiers Limited. – PHASE CONTROL THYRISTOR
PHASE CONTROL THYRISTOR H150TBXX
Symbol
Characteristics
Conditions
TJ
(0C)
Value
Unit
BLOCKING PARAMETERS
VRRM
VDRM
IRRM
IDRM
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
CONDUCTING PARAMETERS
V = VRRM
V = VRRM
125 200-1600
V
125 200-1600
V
125
25
mA
125
25
mA
IF(AV)
IRMS
ITSM
I2t
VT
V0
R0
Average on-state current
RMS on-state current
Surge on-state current
I2t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
180 sine, 50H Z,
TC = 700C
Sine wave,
10mS without 125
reverse voltage
On-state
current = 470A
125
125
125
150
235
3
45
1.80
0.90
1.80
A
A
kA
kA2S
V
V
mΩ
TRIGGERING PARAMETERS
IGT
Gate trigger current
VD = 5V
25
VGT
Gate trigger voltage
25
IL
Latching Current
VD = 5V
25
PG –PEAK Maximum Peak Gate Power
Pulse width
100μSec
di/dt Repetitive rate of rise of current
VFGM Maximum forward gate voltage
IFGM Maximum forward gate current
150
2.00
600
120
150
12
25
mA
V
mA
W
A/μSec
V
A
THERMAL & MECHANICAL PARAMETERS
R TH (J-C)
RTH (C-HK)
TJ
TSTG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to
heatsink
0.234
0.08
125
-40 - 125
14
200
0C/W
0C/W
0C
0C
NM
gms
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