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H1450CHXX Datasheet, PDF (1/6 Pages) Hind Rectifiers Limited. – PHASE CONTROL THYRISTOR
PHASE CONTROL THYRISTOR H1450CHXX
Symbol
Characteristics
Conditions
TJ
(0C)
Value
Unit
BLOCKING PARAMETERS
VRRM
VDRM
IRRM
IDRM
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
CONDUCTING PARAMETERS
V = VRRM
V = VRRM
125 200-2800
V
125 200-2800
V
125
70
mA
125
70
mA
IF(AV)
IRMS
ITSM
I2t
VT
V0
R0
Average on-state current
RMS on-state current
Surge on-state current
I2t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
180 sine, 50H Z,
TC = 820C
Sine wave,
10mS without 125
reverse voltage
On-state
current = 3kA
125
125
125
1450
2280
30
4500
2
0.97
0.27
A
A
kA
kA2S
V
V
mΩ
TRIGGERING PARAMETERS
IGT
Gate trigger current
VD = 5V
25
300
mA
VGT
Gate trigger voltage
25
3.50
V
IL
Latching Current
VD = 5V
25
1000
mA
PG–PEAK Maximum Peak Gate Power
Pulse width
100μSec
150
W
di/dt Repetitive rate of rise of current
200
A/μSec
VFGM Maximum forward gate voltage
12
V
IFGM Maximum forward gate current
50
A
THERMAL & MECHANICAL PARAMETERS
R TH (J-C)
RTH (C-HK)
TJ
TSTG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to
heatsink
0.015
0.005
125
-40 - 125
23
550
0C/W
0C/W
0C
0C
KN
gms
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