P4SMA Datasheet, PDF (3/5 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Transient Voltage Suppressor

Typical Characteristics
FIG. 1-PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN inFIG.3
10
TA=25 C
1.0
0.1
0.1ms
150
100
50
1.0ms
10ms
100ms
td,PULSE WIDTH,sec.
FIG.3-PULSE WAVEFORM
1.0ms
tr=10msec
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% of IppM
PEAK VALUE IppM
10ms
HALF VALUE ^IPPM
2
10/1000msec WAVEFORM
as DFINED by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t,TIME,ms
FIG.5-STEADY STATE POWER DERATING CURVE
1.00
L=0.375” (9.5mm)
lLEAD LENGTHS
60Hz RESISTIVE
OR INDUCTIVE LOAD
0.75
0.50
1.6 1.6 0.040”
(40 40 1mm)
COPPER HEAT SINKS
0.25
0
0
25
50
75
100 125 150 175 200
TL,LEAD TEMPERATURE, C
FIG.7-TYPICAL REVERSE LEAKAGE CHARCTERISTICS
100
10
MEASURED AT DEVICES
STAND-OFF
VOLTAGE,Vwm
1
TA=25 C
0.1
0.01
0
100
200
300
400
500
V(BR),BREAKDOWN VOLTAGE,VOLTS
FIG. 2-PULSE DERATING CURVE
100
75
50
25
0
0 25
50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE,( C)
FIG. 4-TYPICAL JUNCTIONAL CAPACITANCE
UNIDIRECTIONAL
10,000
TJ=25 C
f=1.0Mhz
Vsig=50mVp-p
1,000
MEASURED at
ZERO BIAS
100
MEASURED at
STAND-OFF
VOLTAGE,VwM
10
1.0
10
100 200
V(BR),BREAKDOWN VOLTAGE,VOLTS
FIG.6-MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
50
40
30
20
TJ=TJmax.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
10
1.0
10
100
NUMBER OF CYCLES AT 60Hz
High Diode Semiconductor
3