MMUN2211 Datasheet, PDF (2/11 Pages) E-Tech Electronics LTD – Bias Resistor Transistor

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutof f Current (VCB= 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE= 50 V, IB= 0)
Emitter-Base Cutof f Current
(VEB= 6.0 V, I _C = 0)
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
Collector-Base Breakdown Voltage (I _C = 10 mA, I _E = 0)
Collector-Emitter Breakdown Voltage (Note 2.)
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS ^{(Note 2.)}
DC Current Gain
(VCE= 10 V, IC = 5.0 mA)
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC= 10 mA, I _B = 5 mA) MMUN2230/MMUN2231
(IC= 10 mA, I _B = 1 mA) MMUN2215/MMUN2216/MMUN2232
MMUN2233/MMUN2234/MMUN2235/MMUN2238
Output Voltage (on)
(VCC= 5.0 V, VB= 2.5 V, RL= 1.0 kW)
(VCC= 5.0 V, VB= 3.5 V, RL= 1.0 k W)
(VCC= 5.0 V, VB= 5.0 V, RL= 1.0 k W)
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0 %.
Symbol
ICBO
ICEO
IEBO
V _(BR)CBO
V _(BR)CEO
hFE
VCE(sat)
VOL
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
80
160
160
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
-
100
nAdc
-
500
nAdc
-
mAdc
0.5
-
0.2
-
0.1
-
0.2
-
0.9
-
1.9
-
4.3
-
2.3
-
1.5
-
0.18
-
0.13
-
0.2
-
4.0
-
0.1
-
-
Vdc
-
-
Vdc
60
-
100
-
140
-
140
-
350
-
350
-
5.0
-
15
-
30
-
200
-
150
-
140
-
350
-
350
-
-
0.25
Vdc
Vdc
-
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
0.2
High Diode Semiconductor
2