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| MMBTA42-28CH-29 Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors | |||
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Typical Characteristics
18
IC ââ VCE
90uA
COMMON
16
80uA
EMITTER
Ta=25â
14
70uA
12
60uA
10
50uA
40uA
8
30uA
6
20uA
4
IB=10uA
2
0
0
2
4
6
8
10 12 14 16 18 20 22
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat ââ IC
500
1000
100
10
0.1
900
100
Ta=100 â
600
Ta=25â
hFE ââ IC
Ta=100â
Ta=25â
COMMON EMITTER
VCE=10V
1
10
100
COLLECTOR CURRENT IC (mA)
VBEsat ââ IC
Ta=25â
Ta=100 â
10
0.1
100
10
1
10
COLLECTOR CURREMT I (mA)
C
IC ââ VBE
β=10
100
300
0.1
300
100
1
10
COLLECTOR CURREMT IC (mA)
fT ââ IC
β=10
100
1
0.1
0
100
COMMON EMITTER
VCE=10V
300
600
900
BASE-EMMITER VOLTAGE VBE (mV)
1200
Cob/Cib ââ VCB/VEB
Cib
f=1MHz
IE=0/IC=0
Ta=25 â
10
0.1
400
300
COMMON EMITTER
VCE=20V
Ta=25â
1
10
100
COLLECTOR CURRENT IC (mA)
PC ââ Ta
10
200
Cob
100
1
0.1
1
10
20
REVERSE VOLTAGE V (V)
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (â)
High Diode Semiconductor
2
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