ES1A-28J-29 Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SMAJ Plastic-Encapsulate Diodes

Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
FIG.2:MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
50
:
40
8.3ms Single Half Sine Wave
JEDEC Method
30
0.4
20
0.2 ^{Single Phase Half Wave 60HZ Resistive or}
Inductive Load 0.375''(9.5mm) Lead Length
0
0
50
100
10
150
1
2
10
20
100
Number of Cycles
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.02
0.01
0.4
FIG.3: TYPICAL FORWARD CHARACTERISTICS
ES1A-ES1D
ES1F-ES1G
ES1H-ES1J
TJ=25℃
Pulse width=300us
1% Duty Cycle
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VF(V)
1000
FIG.4:TYPICAL REVERSE CHARACTERISTICS
100
10
1.0
0.1
0.01
0
Tj=125℃
Tj=100℃
Tj=25℃
20
40
60
80
100
Voltage(%)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
VR
IF
RL
0
IR
t
IRR
High Diode Semiconductor
2