DSS32-F Datasheet, PDF (2/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOD-123FL Plastic-Encapsulate Diodes

Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
3.0
DSS32-DSS34
DSS35-DSS320
2.5
2.0
1.5
1.0
0.5
0
0
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5mm×5mm)Copper Pad Areas
25
50
75
100
125
150
TL(℃ )
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
90
80
8.3ms Single Half Sine Wave
JEDEC Method
70
60
50
40
1
2
10
20
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
100
TJ=25℃
Pulse width=300us
1% Duty Cycle
10
1.0
DSS32-DSS34
DSS35-DSS36
0.1
DSS38-DSS310
DSS315-DSS320
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF(V)
FIG.4：TYPICAL REVERSE CHARACTERISTICS
100
DSS32-DSS36
DSS38-DSS320
10
Tj=125℃
1.0
Tj=75℃
0.1
0.01
0.001
0
Tj=25℃
20
40
60
80
100
Voltage(%)
High Diode Semiconductor
2