CRS01 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – SCHOTTKY BARRIER TYPE (HIGH SPEED RECTIFIER APPLICATIONS)

Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
1.0
0.5
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5mm×5mm)Copper Pad Areas
0
0
25
50
75
100
125
150
TL(℃ )
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
30
24
8.3ms Single Half Sine Wave
JEDEC Method
18
12
6
0
1
2
10
20
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
100
10
1.0
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF(V)
FIG.4：TYPICAL REVERSE CHARACTERISTICS
100
TA ^{= 150 °C}
10
1
T_A ^{= 100 °C}
0.1
0.01
T_A = 25 °C
0.001
0.0001
10 20 30 40 50 60 70 80 90 100
Voltage(%)
High Diode Semiconductor
2