BAS70W Datasheet, PDF (2/4 Pages) NXP Semiconductors – Schottky barrier double diodes

Typical Characteristics
70
Pulsed
Forward Characteristics
10
1
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE V (V)
F
100
Pulsed
10
1
Reverse Characteristics
T =100℃
a
0.1
T =25℃
a
0.01
1E-3
0
10
20
30
40
50
60
70
REVERSE VOLTAGE V (V)
R
Capacitance Characteristics Per Diode
2.4
T =25℃
a
f=1MHz
2.0
1.6
1.2
0.8
0.4
0.0
0
4
8
12
16
20
REVERSE VOLTAGE V (V)
R
250
200
150
100
50
0
0
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2