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US3ABF Datasheet, PDF (1/4 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER | |||
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US3AB F THRU US3MB F
SMBF Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
âIo
3A
âVRRM
50V-1000V
âHigh surge current capability
âGlass passivated chip
âPolarity: Color band denotes cathode
Applications
â Rectifier
Marking
â US3ABF-US3MBF : US3AB-US3MB
SMBF
HD BF80
Item
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
Symbol Unit
VRRM
V
VRMS
V
Test Conditions
US3
ABF BBF DBF GBF JBF KBF MBF
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
IF(AV)
A
60HZ Half-sine wave, Resistance
load, TL =110â
3.0
IFSM
TJ
TSTG
A
60Hz Half-sine wave ,1 cycle ,
Ta =25â
â
â
100
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25â Unless otherwise specifiedï¼
Item
Symbol
Unit
Test Condition
US3
ABF BBF DBF GBF JBF KBF MBF
Peak Forward Voltage
VF
V
IF =3.0A
1.0
1.3
1.7
Maximum reverse recovery
time
Peak Reverse Current
Thermal
Resistance(Typical)
trr
IRRM1
IRRM2
RθJ-A
RθJ-L
ns
μA
â/W
IF=0.5A,IR=1.0A,Irr=0.25A
VRM=VRRM
Ta =25â
Ta =100â
Between junction and ambient
Between junction and terminal
50
75
5.0
100
801)
201)
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1
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