US2AF-SOT-23 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SMAF Plastic-Encapsulate Diodes

US2AF THRU US2MF
SMAF Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●Io
2A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● US2AF-US2MF : US2A-US2M
SMAF
HD AF56
Item
Symbol Unit
Repetitive Peak Reverse Voltage VRRM V
Maximum RMS Voltage
V _RMS
V
Test Conditions
US2
AF BF DF FF GF JF KF MF
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I_F(AV)
I_FSM
T_J
T_STG
A ^{60HZ Half-sine wave, Resistance}
load, TL =110℃
A ^{60Hz Half-sine wave ,1 cycle ,}
Ta =25℃
℃
℃
2.0
50
-55~+150
-55~+150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol _Unit
Test Condition
US2
AF BF DF FF GF JF KF MF
Peak Forward Voltage
V_F
V
I_F =2.0A
1.0
1.3
1.7
Maximum reverse recovery
time
Peak Reverse Current
Thermal
Resistance(Typical)
t_rr
I_RRM1
I_RRM2
R_θJ-A
R_θJ-L
ns
I_F=0.5A,I_R=1.0A,I_rr=0.25A
μA V_RM=V_RRM
Ta =25℃
Ta =100℃
Between junction and ambient
℃/ W
Between junction and terminal
50
75
5.0
100
80¹⁾
20¹⁾
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1