US2ABF Datasheet, PDF (1/4 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER

US2AB F THRU US2MB F
SMBF Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●Io
2A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● US2ABF-US2MBF : US2AB-US2MB
SMBF
HD BF56
Item
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
Symbol Unit
VRRM
V
V_RMS
V
Test Conditions
US2
ABF BBF DBF GBF JBF KBF MBF
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
IF(AV)
A
60HZ Half-sine wave, Resistance
load, TL =110℃
2.0
IFSM
TJ
TSTG
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
℃
℃
50
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol
Unit
Test Condition
US2
ABF BBF DBF GBF JBF KBF MBF
Peak Forward Voltage
V_F
V
I_F =2.0A
1.0
1.3
1.7
Maximum reverse recovery
time
Peak Reverse Current
Thermal
Resistance(Typical)
trr
I_RRM1
I_RRM2
R_θJ-A
R_θJ-L
ns
μA
℃/W
IF=0.5A,IR=1.0A,Irr=0.25A
VRM=VRRM
Ta =25℃
Ta =100℃
Between junction and ambient
Between junction and terminal
50
75
5.0
100
80¹⁾
20¹⁾
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1