US1AL Datasheet, PDF (1/4 Pages) Rugao Dachang Electronics Co., Ltd – Surface Mounted High-efficiency Rectifier Reverse Voltage 50 --- 1000 V Forward Current 1.0 A

US1AL THRU US1ML
SOD1 23SL Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●Io
1A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● _{US1AL-US1DL : USL}
US1GL : USM
US1JL-US1ML : USH
SOD-1 23SL
HD SL 46
Item
Symbol Unit
Conditions
US1
AL BL DL FL GL JL KL ML
Repetitive Peak Reverse Voltage VRRM
V
Maximum RMS Voltage
V_RMS
V
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
I_F(AV)
I_FSM
T_J
A
60Hz Half-sine wave, Resistance
load, Ta=110℃
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
℃
1.0
25
-55 ~ +150
Storage Temperature
T_STG
℃
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Item
Symbol Unit
Test Condition
US1
1AAL 1BBL 1DDL 1FFL 1GGL 1JJL 1KKL 1MML
Peak Forward Voltage
V_FM
V
I_FM=1.0A
1.0
1.4
1.7
Peak Reverse Current
Reverse Recovery time
Thermal
Resistance(Typical)
I_RRM1
I_RRM2
trr
R_θJ-A
R_θJ-L
μA
ns
℃/W
V_RM=V_RRM
Ta=25℃
Ta=125℃
I_F=0.5A I_R=1A
I_RR=0.25A
Between junction and ambient
Between junction and terminal
5
50
50
75
75¹⁾
27¹⁾
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1