US1AF Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – SURFACE MOUNT ULTRA FAST RECTIFIER

US1AF THRU US1MF
SMAF Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●Io
1A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● US1AF-US1MF : US1A-US1M
SMAF
HD AF46
Item
Symbol Unit
Repetitive Peak Reverse Voltage V_RRM
V
Maximum RMS Voltage
V RMS
V
Conditions
US
1AF 1BF 1DF 1FF 1GF 1JF 1KF 1MF
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I_F(AV)
I_FSM
T_J
T_STG
60Hz Half-sine wave, Resistance
A _{load, TL=115℃}
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
℃
℃
1.0
30
-55 ~ +150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Item
Symbol Unit
Test Condition
US
1AF 11BBF 11DDF 11FFF 11GGF 11JJF 11KKF 11MMF
Peak Forward Voltage
V_FM
V
I_FM=1.0A
1.0
1.3
1.7
Peak Reverse Current
Reverse Recovery time
Thermal
Resistance(Typical)
I_RRM1
I_RRM2
trr
R_θJ-A
R_θJ-L
μA
ns
℃/W
V_RM=V_RRM
Ta=25℃
Ta=125℃
I_F=0.5A I_R=1A
I_RR=0.25A
Between junction and ambient
Between junction and terminal
5
100
50
75
75¹⁾
27¹⁾
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1