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| SS8550-TO-92 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-92 Plastic-Encapsulate Transistors | |||
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SS8550
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
â Complimentary to SS8050
â Collector Current: IC=-1.5A
TO- 9 2
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Value
Unit
-40
V
-25
V
-5
V
-1.5
A
150
â
-55ï½+150 â
E BC
Electrical Characteristics (T=25â Unless otherwise specifiedï¼
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100uA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
Collector cut-off current
ICBO
VCB=-40V, IE=0
Emitter cut-off current
ICEO
VCE=-20V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
Collector-emitter saturation voltage
VCE(sat) IC=-800mA, IB=-80mA
Base-emitter saturation voltage
VBE(sat) IC=-800mA, IB=-80mA
Base-emitter voltage
VBE(on) VCE=-1V, IC=-10mA
Out capacitance
Cob
VCB=-10V, IE=0mA,f=1MHZ
Transition frequency
fT
VCE=-10V, IC=-50mA,f=30MHZ
Min Typ Max Unit
-40
V
-25
V
-5
V
-0.1
μA
-0.1
μA
-0.1
uA
85
400
40
-0.5
V
-1.2
V
-1
V
20
pF
100
MHz
CLASSIFICATION OF hFE (2)
Rank
B
Range
85-160
C
120-200
D
160-300
D3
300-400
High Diode Semiconductor
1
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