SS82B Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SMB Plastic-Encapsulate Diodes

SS82 THRU SS810
SMB Plastic-Encapsulate Diodes
Schottky Rectifier
Features
●Io
8A
●VRRM
20V-100V
●High surge current capability
●Polarity: Color band denotes cathode
SMB
Applications
● Rectifier
Marking
● SS8X
X ^: From 2 To 10
HD BK 88
Item
Symbol Unit
Repetitive Peak Reverse Voltage VRRM
V
Maximum RMS Voltage
V_RMS
V
Conditions
SS8
20 30 40 50 60 80 100
20 30 40 50 60 80 100
14 21 28 35 42 56 70
Average Forward Current
I_F(AV)
A
60Hz Half-sine wave, Resistance
load, TL(Fig.1)
8.0
Surge(Non-repetitive)Forward
Current
I_FSM
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
200
Junction Temperature
T_J
℃
-55~+125
-55 ~ +150
Storage Temperature
T_STG
℃
-55 ~ +150
Electrical Characteristics (T_a=25℃ Unless otherwise specified）
Item
Symbol Unit
Peak Forward
Voltage
Peak Reverse
Current
Thermal
Resistance(Typical)
V_FM
I_RRM1
I_RRM2
R_θJ-A
R_θJ-L
V
mA
℃/W
Test Condition
I_FM=8.0A
V_RM=V_RRM
Ta=25℃
Ta=100℃
Between junction and ambient
Between junction and lead
20 30 40
0.55
0.5
SS8
50 60
80 100
0.7
0.85
0.1
20
25
3
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm)^er
copper pad areas
High Diode Semiconductor
1