 English |
|
|
|
|
|
|
|
| SS8050-TO-92 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-92 Plastic-Encapsulate Transistors | |||
| |||
|
SS8050
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
â Complimentary to SS8550
â Collector Current: IC=1.5A
TO- 9 2
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Value
Unit
40
V
25
V
5
V
1.5
A
150
â
-55ï½+150 â
E BC
Electrical Characteristics (T=25â Unless otherwise specifiedï¼
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=40V, IE=0
Emitter cut-off current
ICEO
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=1V, IC=100mA
VCE=1V, IC=800mA
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB=80mA
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB=80mA
Base-emitter voltage
VBE
VCE=1V, IC=10mA
Transition frequency
fT
VCE=10V, IC=50mA,f=30MHZ
Min Typ Max Unit
40
V
25
V
5
V
0.1
μA
0.1
μA
0.1
μA
85
400
40
0.5
V
1.2
V
1
V
100
MHz
CLASSIFICATION OF hFE
Rank
B
Range
85-160
C
120-200
D
160-300
D3
300-400
High Diode Semiconductor
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese