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| SS8050-SOT-323 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-323 Plastic-Encapsulate Transistors | |||
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SS8050
SOT-323 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
â Complimentary to SS8550
â Collector Current: IC=1.5A
SOT- 3 23
Marking:
â Y1
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
40
Collector-Emitter Voltage
25
Emitter-Base Voltage
5
Collector Current
1.5
Collector Power Dissipation
250
Thermal Resistance From Junction To Ambient
500
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
A
mW
â/W
â
â
C
E
B
C
B
E
Electrical Characteristics (Ta=25â Unless otherwise specifiedï¼
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=40V, IE=0
Collector cut-off current
ICEO
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE(1)
VCE=1V, IC= 100mA
120
hFE(2)
VCE=1V, IC= 800mA
40
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB= 80mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=800mA, IB= 80mA
fT
VCE=10V, IC= 50mA,
f=30MHz
100
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
L
Range
120-200
H
200-350
Typ
Max Unit
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.5
V
1.2
V
MHz
15
pF
J
300-400
High Diode Semiconductor
1
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